Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• occurs when the electron energy matches that of an anion state. Other dissociation channels, such as neutral dissociation (ND) and dissociative ionization (DI), are threshold processes, but their efficiency declines above roughly 100 eV because the interaction time with the molecule becomes too short

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• composition and morphology of FEBID deposits fabricated in an ultrahigh-vacuum (UHV) chamber were explored on different surfaces and at varied beam currents. In the gas phase, dissociative ionization was found to lead to significant carbon loss from this precursor, and about 50% of the chlorine was on average

• removed per dissociative ionization incident. On the other hand, in dissociative electron attachment, no chlorine was removed from the parent molecule. Contrary to these observations, FEBID in the UHV setup was found to yield a quantitative loss and desorption of the chlorine from the deposits, an effect

• yielded deposits with high gold content, ranging from 45 to 61 atom % depending on the beam current and on the cleanliness of the substrates surface. Keywords: dissociative electron attachment; dissociative ionization; focused-electron-beam-induced deposition (FEBID); gold deposit; low-energy electrons

Fragmentation of metal(II) bis(acetylacetonate) complexes induced by slow electrons

• Janina Kopyra and
• Hassan Abdoul-Carime

Beilstein J. Nanotechnol. 2023, 14, 980–987, doi:10.3762/bjnano.14.81

• electron energy range investigated in the present work, that is, below 10 eV, DEA, as well as neutral dissociation and dissociative ionization, are the mechanisms responsible for the efficient fragmentation of molecules. In the case of dissociative electron attachment, studied in the present work, the

Low-energy electron interaction and focused electron beam-induced deposition of molybdenum hexacarbonyl (Mo(CO)₆)

• Po-Yuan Shih,
• Maicol Cipriani,
• Christian Felix Hermanns,
• Jens Oster,
• Klaus Edinger,
• Armin Gölzhäuser and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2022, 13, 182–191, doi:10.3762/bjnano.13.13

• , University of Iceland, Dunhagi 3, 107 Reykjavik, Iceland 10.3762/bjnano.13.13 Abstract Motivated by the potential role of molybdenum in semiconductor materials, we present a combined theoretical and experimental gas-phase study on dissociative electron attachment (DEA) and dissociative ionization (DI) of Mo

• ]. In general, there are four distinct electron-induced processes that lead to molecular fragmentation [13]. These are dissociative electron attachment (DEA), dissociative ionization (DI), neutral dissociation (ND) and dipolar dissociation (DD). The processes differ distinctly in their energy dependence

• )6, Cr(CO)6 and Mo(CO)6, from Winters et al. (1966) [19], Pignataro et al. (1965) [20] and George et al. (1982) [21] as well as a number of dissociative ionization studies from the same periods [22][23][24]. For Mo(CO)6, the precursor of interest in this study, dissociative electron-capture

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• including possible mechanisms of irradiation-induced molecular fragmentation can be found, for example, in [42]. The main mechanisms of precursor fragmentation are dissociative electron attachment (DEA) at low electron energies below the ionization potential of the molecule and dissociative ionization (DI

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• characteristic range of electron energies and leads to different dissociative reactions. It is thus tempting to try to exploit this phenomenon to achieve control over chemistry during electron beam processing. For instance, electron impact ionization initiates fragmentation (named dissociative ionization (DI

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

• carbonyl complex H2FeRu3(CO)13 covering its low energy electron induced fragmentation in the gas phase through dissociative electron attachment (DEA) and dissociative ionization (DI), its decomposition when adsorbed on a surface under controlled ultrahigh vacuum (UHV) conditions and exposed to irradiation

• induced decomposition of this precursor and how this is reflected in the relatively poor performance of H2FeRu3(CO)13 as compared to the structurally similar HFeCo3(CO)12. Keywords: dissociative electron attachment; dissociative ionization; electron induced deposition; electron molecule interaction

• by four distinctly different processes, which are active within different energy ranges, and more importantly, lead to distinctly different processes; dissociative electron attachment (DEA), dissociative ionization (DI), and neutral and dipolar dissociation upon electron excitation (ND and DD). An

Electron interaction with copper(II) carboxylate compounds

• Michal Lacko,
• Peter Papp,
• Iwona B. Szymańska,
• Edward Szłyk and
• Štefan Matejčík

Beilstein J. Nanotechnol. 2018, 9, 384–398, doi:10.3762/bjnano.9.38

• fragments of these complexes are formed through single particle resonant processes close to 0 eV. Keywords: amines; dissociative electron attachment; dissociative ionization; FEBID; low energy electrons interaction; Introduction Present technological changes require the development of new methods and new

• electron ionization (EI), dissociative ionization (DI) [17][18][19] processes. Their kinetic energy is only a few eV, with energy distribution determined by the type of wafer and energy of primary beam [20][21]. Thorman et al. have compared gas phase and surface data on low energy electron interactions

• -O2CC2F5)4] molecule. Discussion Positive ions The dissociation pattern of dissociative ionization of the investigated molecules showed loss of entire ligands as well as fragments containing only copper atom (Figure 9). Limited numbers of fragments containing more than two carboxylate ligands are observed

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• irradiation by different processes. The most efficient process at high energy is the dissociative ionization (DI), above the ionization threshold. It produces a neutral fragment and a cation, which can be eventually neutralized. At lower energy, and above the electronic excitation threshold, the most

The rational design of a Au(I) precursor for focused electron beam induced deposition

• Ali Marashdeh,
• Thiadrik Tiesma,
• Niels J. C. van Velzen,
• Sjoerd Harder,
• Remco W. A. Havenith,
• Jeff T. M. De Hosson and
• Willem F. van Dorp

Beilstein J. Nanotechnol. 2017, 8, 2753–2765, doi:10.3762/bjnano.8.274

• is to develop dedicated FEBIP precursors [24]. The high-energy electrons in the focused beam (typically 1–15 keV) induce reactions through ionization processes, such as dissociative electron attachment and dissociative ionization [6][25][26]. While ionization reactions can be very selective [27

Synthesis of [{AgO₂CCH₂OMe(PPh₃)}_n] and theoretical study of its use in focused electron beam induced deposition

• Jelena Tamuliene,
• Julian Noll,
• Peter Frenzel,
• Tobias Rüffer,
• Alexander Jakob,
• Bernhard Walfort and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 2615–2624, doi:10.3762/bjnano.8.262

• ≈50. The reactions of a dissociative ionization, dipolar dissociation, dissociative electron attachment etc. were studied to obtain the reaction pathways energetically most likely and relate to experimentally obtained species. It implies that the energetic of reactions leading from the intact neutral

Amplified cross-linking efficiency of self-assembled monolayers through targeted dissociative electron attachment for the production of carbon nanomembranes

• Sascha Koch,
• Christopher D. Kaiser,
• Paul Penner,
• Michael Barclay,
• Lena Frommeyer,
• Daniel Emmrich,
• Patrick Stohmann,
• Tarek Abu-Husein,
• Andreas Terfort,
• D. Howard Fairbrother,
• Oddur Ingólfsson and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2017, 8, 2562–2571, doi:10.3762/bjnano.8.256

• ten times higher for iodide loss from 2-I-BP than for the other halogenides from the respective biphenyls (BPs). Comparison with dissociative ionization mass spectra shows that the ratio of the efficiency of electron impact ionization induced fragmentation of 2-I-BP, 2-Br-BP, and 2-Cl-BP amounts to

• nanomembrane; dissociative electron attachment; dissociative ionization; helium ion microscopy; self-assembled monolayers; X-ray photoelectron spectroscopy; Introduction Carbon nanomembranes (CNMs) are two-dimensional molecular sheets with a thickness of one to a few nanometers, high mechanical strength, and

• ]. In the energy range from about 0–100 eV, electron-induced bond rupture may proceed through four distinctly different initiating processes: dissociative ionization (DI), neutral or dipolar dissociation upon electronic excitation (ND and DD, respectively) or through dissociative electron attachment

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• and we compare the proximity effect observed for these compounds. The two precursors show similar behaviour with regards to fragmentation through dissociative ionization in the gas phase under single-collision conditions. However, while DCSCH shows appreciable cross sections with regards to

• attachment; dissociative ionization; electron beam induced deposition; low-energy electrons; silacyclohexane; Introduction Focused electron beam induced deposition (FEBID) [1][2] is a 3-D direct writing method suitable for the fabrication of nanostructures, even on non-planar surfaces. This approach is in

•  1), dissociative ionization (DI; Equation 2), neutral dissociation (ND; Equation 3) and dipolar dissociation (DD; Equation 4) [13][14][15][16][17][18][19][20]. The respective reaction schemes for each of these pathways are: The double dagger (‡) signifies vibrational or electronic excitation, the

Dissociative electron attachment to coordination complexes of chromium: chromium(0) hexacarbonyl and benzene-chromium(0) tricarbonyl

• Janina Kopyra,
• Paulina Maciejewska and
• Jelena Maljković

Beilstein J. Nanotechnol. 2017, 8, 2257–2263, doi:10.3762/bjnano.8.225

• molecules via various decomposition processes such as dissociative ionization (DI), dipolar dissociation (DD), neutral dissociation (ND), and dissociative electron attachment (DEA) [8]. These reactions occur with relatively high cross sections and typically result in partial fragmentation of the precursor

Fluorination of vertically aligned carbon nanotubes: from CF₄ plasma chemistry to surface functionalization

• Claudia Struzzi,
• Mattia Scardamaglia,
• Jean-François Colomer,
• Alberto Verdini,
• Luca Floreano,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2017, 8, 1723–1733, doi:10.3762/bjnano.8.173

• ionization occurring in the mass spectrometer apparatus. However, as soon as the plasma discharge is initiated, the discrimination between the ionized species arising from the plasma and the species arising from dissociative ionization in the mass spectrometer is not straightforward. Among the working

• =69 amu) and to the lower signals relative to CF2 (m/z = 50 amu) and CF (m/z = 31 amu) ionized fragments, suggesting that dissociative ionization of the parent CF4 molecule occurs in the ionization chamber of the RGA apparatus. The CF4 is not detected due to its low stability, as already reported in

• the discharge before reaching the mass spectrometer apparatus which is located around 30 cm away from the coil. No vibrational modes are observed in correspondence of COF (expected at 633 cm−1), this result confirms that the COF fragment is produced by dissociative ionization in the mass spectrum as

The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

• Rachel M. Thorman,
• Ragesh Kumar T. P.,
• D. Howard Fairbrother and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2015, 6, 1904–1926, doi:10.3762/bjnano.6.194

• FEBID, specifically, dissociative electron attachment, dissociative ionization, neutral dissociation, and dipolar dissociation, emphasizing the different nature and energy dependence of each process. We then explore the value of studying these processes through comparative gas phase and surface studies

• are needed, these studies are an important stepping-stone toward better understanding the fundamental physics behind the deposition process and establishing design criteria for optimized FEBID precursors. Keywords: dipolar dissociation; dissociative electron attachment; dissociative ionization

• , and thus initiate deposition of typical organometallic precursors. These mechanisms are: dissociative electron attachment (DEA), dissociative ionization (DI), neutral dissociation (ND) and dipolar dissociation (DD) [27][28][29][30][31][32] as depicted in Equations 1–4. Here; “(‡)” denotes that the

Radiation-induced nanostructures: Formation processes and applications

• Michael Huth

Beilstein J. Nanotechnol. 2012, 3, 533–534, doi:10.3762/bjnano.3.61

• . Different processes, such as dissociative electron attachment, neutral dissociation or dissociative ionization act together in breaking selected bonds in (mostly) metal–organic precursor molecules. On the other hand, low-energy electrons also play a role in the radiation damage induced by ionizing radiation